(4/5) based on 4 customer reviews
Description
MOSFET N/P-CH 60V/50V SOT666 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25～C: 330mA, 170mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250米A Gate Charge (Qg) @ Vgs: 0.35nC @ 5V Input Capacitance (Ciss) @ Vds: 36pF @ 25V Power - Max: 500mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666
| Part Number | NX1029X,115 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Intel |
| Description | MOSFET N/P-CH 60V/50V SOT666 |
| Series | Automotive, AEC-Q101, TrenchMOS |
| Packaging | N and P-Channel |
| FET Type | Cut Tape (CT) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V, 50V |
| Current - Continuous Drain (Id) @ 25°C | 330mA, 170mA |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 25V |
| Power - Max | 500mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-666 |
| Image |  |
NX1029X,115
INTEL/ALTERA
25860
0.16
YU TUO (HONGKONG) TRADING CO., LIMITED
NX1029X,115
INTEL/
180
1.225
SUNTOP SEMICONDUCTOR CO., LIMITED
NX1029X,115
Intel
5800
2.29
ZHONGGANG TECHNOLOGY (HK) INDUSTRY LIMITED
NX1029X,115
INT
6800
3.355
EASYIEE TECHNOLOGY LIMITED
NX1029X,115
Intel Corporation
30000
4.42
Far East Electronics Technology Limited
