Description
01/14/09 www.irf.com. 1. HEXFET Power MOSFET. S. D. G. PD -97363. IRLB3034PbF . G. D. S. Gate. Drain. Source. VDSS. 40V. RDS(on) typ. 1.4m: max. 1.7m IRLB3034PBF *. IRLP3034PBF*. 40. 5.9. 200. 75. IRL1404ZSPBF. IRL1404ZPBF. 40. 6.5. 130. 40. IRLR3114ZPBF. 55. 12. 89. 44. IRLR3705ZPBF. 55. 22.5. 60. StrongIRFET . IRFS7430-7PPbF. 1 www.irf.com 2014 International Rectifier. Submit Datasheet Feedback. November 6, 2014. HEXFET Power MOSFET. D. IRLB3034PBF . 1.7. IRF7480MTRPBF. 1.2. IRFH7084TRPBF. 1.25. IRLS3034PBF. 1.7. IRLS3034-7PPBF. 1.4. IRFB7434PBF. 1.6. IRF7739L1TRPBF . 1.0. IRLB3034PBF IRLP3034PBF. 40. 1.75. 340. 160. IRFS3004PBF1. IRFB3004PBF1. 40. 2.0. 270. 160. IRF2804SPBF. 40. 2.3. 270. 160. IRF2804PBF . 40. 3.1. 5.9.
Part Number | IRLB3034PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intel |
Description | MOSFET N-CH 40V 195A TO220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 162nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 10315pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 195A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
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