(4/5) based on 12 customer reviews
Description
IRG4PF50WD . INSULATED GATE BIPOLAR TRANSISTOR WITH. ULTRAFAST SOFT RECOVERY DIODE. Features. E. G n-channel. C. Optimized for use in Emitter Controlled-Diode is Infineon unique Fast Recovery Diode technology. The Ultrathin wafer and field-stop technology makes the Emitter Controlled-Diode 6.5. 2.6. D2-Pak; TO-220AB; TO-220 FullPak. IRG4(B/IB/P)C30W. 12. 2.7. D2-Pak ; TO-220AB; TO-220 FullPak; TO-247AC. IRG4(B/P)C40W. 20. 2.5. TO-262 Dec 30, 2000 Absolute Maximum Ratings. Parameter. Max. Units. VCES. Collector-to-Emitter Voltage. 600. V. IC @ TC = 25 C. Continuous Collector Current.
| Part Number | IRG4PF50WD |
| Brand | Intel |
| Image |  |
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