Part Number | IRFD110PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intel |
Description | MOSFET N-CH 100V 1A 4-DIP |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 540 mOhm @ 600mA, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
Image |
IRFD110PBF
INTEL/ALTERA
8748
0.32
ANT NEST ELECTRONIC CO., LIMITED
IRFD110PBF
INTEL/
6518
1.0475
MY Group (Asia) Limited
IRFD110PBF
Intel
6954
1.775
Hong Kong YST Electronics Co., Limited
IRFD110PBF
INT
6463
2.5025
Cicotex Electronics (HK) Limited
IRFD110PBF
Intel Corporation
9819
3.23
Innovation Best Electronics Technology Limited