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Description
Jul 7, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDMS0312AS . FDMS0312AS . PQFN-8. (TFSnCuBW). Jul 07, 2016. Jan 13, 2017 FDMS0312AS . PQFN-8 (TFSnCuBW). GEM. GEM. 0.105957. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp.
Part Number | FDMS0312AS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intel |
Description | MOSFET N-CH 30V 18A PT8 |
Series | PowerTrench, SyncFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1815pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 36W (Tc) |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (5x6), Power56 |
Package / Case | 8-PowerTDFN |
Image | ![]() |
FDMS0312AS
INTEL/ALTERA
5000000
1.16
Hongkong Shengshi Electronics Limited
FDMS0312AS
INTEL/
3000
2.3675
Shenzhen Qiangneng Electronics Co., Ltd.
FDMS0312AS
Intel
13050
3.575
CIS Ltd (CHECK IC SOLUTION LIMITED)
FDMS0312AS
INT
9000
4.7825
SUMMER TECH(HK) LIMITED
FDMS0312AS
Intel Corporation
2000
5.99
Yingxinyuan INT'L (Group) Limited