Part Number | 2N7002E-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Intel |
Description | MOSFET N-CH 60V 240MA SOT-23 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 240mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 21pF @ 5V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 350mW (Ta) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 250mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
2N7002E-T1-E3
INTEL/ALTERA
3650
0.33
HK HEQING ELECTRONICS LIMITED
2N7002E-T1-E3
INTEL/
180
1.265
SUNTOP SEMICONDUCTOR CO., LIMITED
2N7002E-T1-E3
Intel
4868000
2.2
Shenzhen WTX Capacitor Co., Ltd.
2N7002E-T1-E3
INT
49368
3.135
Cicotex Electronics (HK) Limited
2N7002E-T1-E3
Intel Corporation
3000
4.07
Belt (HK) Electronics Co